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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION *With TO-3 package *High breakdown voltage *High speed switching APPLICATIONS *For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 3 50 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IE=1mA ; IC=0 IC=2.5A; IB=0.8A IC=2.5A; IB=0.8A VCB=600V; IE=0 VEB=5V; IC=0 IC=1 A ; VCE=5V 8 MIN 800 6 2SC1942 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 5.0 1.5 10 10 40 V V A A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1942 Fig.2 Outline dimensions 3 |
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